A photovoltaic (PV) module is a series and parallel connection of multiple PV cells; defects in any cell can cause module power to drop. Similarly, a photovoltaic system is a series and parallel connection of multiple modules, and any low-performing module in the PV system can decrease the system output power. Defects in a solar cell include, but not limited to, the presence of cracks, potential induced degradation (PID), delamination, corrosion, and solder bond degradation. State-of-the-art characterization techniques to identify the defective cells in a module and defective module in a string are i) Current-voltage (IV) curve tracing, ii) Electroluminescence (EL) imaging, and iii) Infrared (IR) imaging. Shortcomings of these techniques include i) unsafe connection and disconnection need to be made with high voltage electrical cables, and ii) labor and time intensive disconnection of the photovoltaic strings from the system.This work presents a non-contact characterization technique to address the above two shortcomings. This technique uses a non-contact electrostatic voltmeter (ESV) along with a probe sensor to measure the surface potential of individual solar cells in a commercial module and the modules in a string in both off-grid and grid-connected systems. Unlike the EL approach, the ESV setup directly measures the surface potential by sensing the electric field lines that are present on the surface of the solar cell. The off-grid testing of ESV on individual cells and multicells in crystalline silicon (c-Si) modules and on individual cells in cadmium telluride (CdTe) modules and individual modules in a CdTe string showed less than 2% difference in open circuit voltage compared to the voltmeter values. In addition, surface potential mapping of the defective cracked cells in a multicell module using ESV identified the dark, grey, and bright areas of EL images precisely at the exact locations shown by the EL characterization. The on-grid testing of ESV measured the individual module voltages at maximum power point (Vmpp) and quantitatively identified the exact PID-affected module in the entire system. In addition, the poor-performing non-PID modules of a grid-connected PV system were also identified using the ESV technique.

The popularity of solar photovoltaic (PV) energy is growing across the globe with more than 500 GW installed in 2018 with a capacity of 640 GW in 2019. Improved PV module reliability minimizes the levelized cost of energy. Studying and accelerating encapsulant browning and solder bond degradation—two of the most commonly observed degradation modes in the field—in a lab requires replicating the stress conditions that induce the same field degradation modes in a controlled accelerated environment to reduce testing time.

Accelerated testing is vital in learning about the reliability of solar PV modules. The unique streamlined approach taken saves time and resources with a statistically significant number of samples being tested in one chamber under multiple experimental stress conditions that closely mirror field conditions that induce encapsulant browning and solder bond degradation. With short circuit current (Isc) and series resistance (Rs) degradation data sets at multiple temperatures, the activation energies (Ea) for encapsulant browning and solder bond degradation was calculated.

Regular degradation was replaced by the wear-out stages of encapsulant browning and solder bond degradation by subjecting two types of field-aged modules to further accelerated testing. For browning, the Ea calculated through the Arrhenius model was 0.37 ± 0.17 eV and 0.71 ± 0.07 eV. For solder bond degradation, the Arrhenius model was used to calculate an Ea of 0.12 ± 0.05 eV for solder with 2wt% Ag and 0.35 ± 0.04 eV for Sn60Pb40 solder.

To study the effect of types of encapsulant, backsheet, and solder on encapsulant browning and solder bond degradation, 9-cut-cell samples maximizing available data points while minimizing resources underwent accelerated tests described for modules. A ring-like browning feature was observed in samples with UV pass EVA above and UV cut EVA below the cells. The backsheet permeability influences the extent of oxygen photo-bleaching. In samples with solder bond degradation, increased bright spots and cell darkening resulted in increased Rs. Combining image processing with fluorescence imaging and electroluminescence imaging would yield great insight into the two degradation modes.

Potential-Induced Degradation (PID) is an extremely serious photovoltaic (PV) durability issue significantly observed in crystalline silicon PV modules due to its rapid power degradation, particularly when compared to other PV degradation modes. The focus of this dissertation is to understand PID mechanisms and to develop PID-free cells and modules. PID-affected modules have been claimed to be fully recovered by high temperature and reverse potential treatments. However, the results obtained in this work indicate that the near-full recovery of efficiency can be achieved only at high irradiance conditions, but the full recovery of efficiency at low irradiance levels, of shunt resistance, and of quantum efficiency (QE) at short wavelengths could not be achieved. The QE loss observed at short wavelengths was modeled by changing the front surface recombination velocity. The QE scaling error due to a measurement on a PID shunted cell was addressed by developing a very low input impedance accessory applicable to an existing QE system. The impacts of silicon nitride (SiNx) anti-reflection coating (ARC) refractive index (RI) and emitter sheet resistance on PID are presented. Low RI ARC cells (1.87) were observed to be PID-susceptible whereas high RI ARC cells (2.05) were determined to be PID-resistant using a method employing high dose corona charging followed by time-resolved measurement of surface voltage. It has been demonstrated that the PID could be prevented by deploying an emitter having a low sheet resistance (~ 60 /sq) even if a PID-susceptible ARC is used in a cell. Secondary ion mass spectroscopy (SIMS) results suggest that a high phosphorous emitter layer hinders sodium transport, which is responsible for the PID. Cells can be screened for PID susceptibility by illuminated lock-in thermography (ILIT) during the cell fabrication process, and the sample structure for this can advantageously be simplified as long as the sample has the SiNx ARC and an aluminum back surface field. Finally, this dissertation presents a prospective method for eliminating or minimizing the PID issue either in the factory during manufacturing or in the field after system installation. The method uses commercially available, thin, and flexible Corning® Willow® Glass sheets or strips on the PV module glass superstrates, disrupting the current leakage path from the cells to the grounded frame.