The development of biosensing platforms not only has an immediate lifesaving effect but also has a significant socio-economic impact. In this dissertation, three very important biomarkers with immense importance were chosen for further investigation, reducing the technological gap and improving their sensing platform.Firstly, gold nanoparticles (AuNP) aggregation and sedimentation-based assays were developed for the sensitive, specific, and rapid detection of Ebola virus secreted glycoprotein (sGP)and severe acute respiratory syndrome coronavirus 2 (SARS-COV2) receptor-binding domain (RBD) antigens. An extensive study was done to develop a complete assay workflow from critical nanobody generation to optimization of AuNP size for rapid detection. A rapid portable electronic reader costing (<$5, <100 cm3), and digital data output was developed. Together with the developed workflow, this portable electronic reader showed a high sensitivity (limit of detection of ~10 pg/mL, or 0.13 pM for sGP and ~40 pg/mL, or ~1.3 pM for RBD in diluted human serum), a high specificity, a large dynamic range (~7 logs), and accelerated readout within minutes. Secondly, A general framework was established for small molecule detection using plasmonic metal nanoparticles through wide-ranging investigation and optimization of assay parameters with demonstrated detection of Cannabidiol (CBD). An unfiltered assay suitable for personalized dosage monitoring was developed and demonstrated. A portable electronic reader demonstrated optoelectronic detection of CBD with a limit of detection (LOD) of <100 pM in urine and saliva, a large dynamic range (5 logs), and a high specificity that differentiates closely related Tetrahydrocannabinol (THC). Finally, with careful biomolecular design and expansion of the portable reader to a dual-wavelength detector the classification of antibodies based on their affinity to SARS-COV2 RBD and their ability to neutralize the RBD from binding to the human Angiotensin-Converting Enzyme 2 (ACE2) was demonstrated with the capability to detect antibody concentration as low as 1 pM and observed neutralization starting as low as 10 pM with different viral load and variant. This portable, low-cost, and versatile readout system holds great promise for rapid, digital, and portable data collection in the field of biosensing.

In this dissertation, atomic layer processing and surface characterization techniques were used to investigate surface conditions of wide band gap materials, gallium nitride (GaN) and gallium oxide (Ga2O3). These studies largely focused on mitigation and removal of defect formation induced by ions used in conventional plasma-based dry etching techniques. Band bending measured by x-ray photoelectron spectroscopy (XPS) was used to characterize charge compensation at the surface of GaN (0001) and determine densities of charged surface states produced by dry etching. Mitigation and removal of these dry-etch induced defects was investigated by varying inductively coupled plasma (ICP) etching conditions, performing thermal and plasma-based treatments, and development of a novel low-damage, self-limiting atomic layer etching (ALE) process to remove damaged material. Atomic layer deposition (ALD) and ALE techniques were developed for Ga2O3 using trimethylgallium (TMG). Ga2O3 was deposited by ALD on Si using TMG and O2 plasma with a growth rate of 1.0 ± 0.1 Å/cycle. Ga2O3 films were then etched using HF and TMG using a fully thermal ALE process with an etch rate of 0.9 ± Å/cycle. O2 plasma oxidation of GaN for surface conversion to Ga2O3 was investigated as a pathway for ALE of GaN using HF and TMG. This process was characterized using XPS, in situ multi-wavelength ellipsometry, and transmission electron microscopy. This study indicated that the etch rate was lower than anticipated, which was attributed to crystallinity of the converted surface oxide on GaN (0001).

The advent of silicon, germanium, narrow-gap III-V materials, and later the wide bandgap (WBG) semiconductors, and their subsequent revolution and enrichment of daily life begs the question: what is the next generation of semiconductor electronics poised to look like? Ultrawide bandgap (UWBG) semiconductors are the class of semiconducting materials that possess an electronic bandgap (EG) greater than that of gallium nitride (GaN), which is 3.4 eV. They currently consist of beta-phase gallium oxide (β-Ga2O3 ; EG = 4.6–4.9 eV), diamond (EG = 5.5 eV), aluminum nitride (AlN; EG =6.2 eV), cubic boron nitride (BN; EG = 6.4 eV), and other materials hitherto undiscovered. Such a strong emphasis is placed on the semiconductor bandgap because so many relevant electronic performance properties scale positively with the bandgap. Where power electronics is concerned, the Baliga's Figure of Merit (BFOM) quantifies how much voltage a device can block in the off state and how high its conductivity is in the on state. The BFOM has a sixth-order dependence on the bandgap. The UWBG class of semiconductors also possess the potential for higher switching efficiencies and power densities and better suitability for deep-UV and RF optoelectronics. Many UWBG materials have very tight atomic lattices and high displacement energies, which makes them suitable for extreme applications such as radiation-harsh environments commonly found in military, industrial, and outer space applications. In addition, the UWBG materials also show promise for applications in quantum information sciences. For all the inherent promise and burgeoning research efforts, key breakthroughs in UWBG research have only occurred as recently as within the last two to three decades, making them extremely immature in comparison with the well-known WBG materials and others before them. In particular, AlN suffers from a lack of wide availability of low-cost, highquality substrates, a stark contrast to β-Ga2O3, which is now readily commercially available. In order to realize more efficient and varied devices on the relatively nascent UWBG materials platform, a deeper understanding of the various devices and physics is necessary. The following thesis focuses on the UWBG materials AlN and β-Ga2O3, overlooking radiation studies, a novel device heterojunction, and electronic defect study.

Wide bandgap semiconductors, also known as WBG semiconductors are materials which have larger bandgaps than conventional semiconductors such as Si or GaAs. They permit devices to operate at much higher voltages, frequencies and temperatures. They are the key material used to make LEDs, lasers, radio frequency applications, military applications, and power electronics. Their intrinsic qualities make them promising for next-generation devices for general semiconductor use. Their ability to handle higher power density is particularly attractive for attempts to sustain Moore's law, as conventional technologies appear to be reaching a bottleneck. Apart from WBG materials, ultra-wide bandgap (UWBG) materials, such as Ga2O3, AlN, diamond, or BN, are also attractive since they have even more extreme properties. Although this field is relatively new, which still remains a lot of effort to study and investigate, people can still expect that these materials could be the main characters for more advanced applications in the near future. In the dissertation, three topics with power devices made by WBG or UWBG semiconductors were introduced. In chapter 1, a generally background knowledge introduction is given. This helps the reader to learn current research focuses. In chapter 2, a comprehensive study of temperature-dependent characteristics of Ga2O3 SBDs with highly-doped substrate is demonstrated. A modified thermionic emission model over an inhomogeneous barrier with a voltage-dependent barrier height is investigated. Besides, the mechanism of surface leakage current is also discussed. These results are beneficial for future developments of low-loss β-Ga2O3 electronics and optoelectronics. In chapter 3, vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures on bulk GaN substrates was introduced. This work represents a useful reference for the FMR termination design for GaN power devices. In chapter 4, AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) fabricated on Si substrates with a 10 nm boron nitride (BN) layer as gate dielectric was demonstrated. The material characterization was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy (UPS). And the gate leakage current mechanisms were also investigated by temperature-dependent current-voltage measurements. Although still in its infancy, past and projected future progress of electronic designs will ultimately achieve this very goal that WBG and UWBG semiconductors will be indispensable for today and future’s science, technologies and society.

Wurtzite (B, Ga, Al) N semiconductors, especially (Ga, Al) N material systems, demonstrate immense promises to boost the economic growth in the semiconductor industry that is approaching the end of Moore’s law. At the material level, their high electric field strength, high saturation velocity, and unique heterojunction polarization charge have enabled tremendous potentials for high power, high frequency, and photonic applications. With the availability of large-area bulk GaN substrates and high-quality epilayer on foreign substrates, the power conversion applications of GaN are now at the cusp of commercialization.Despite these encouraging advances, there remain two critical hurdles in GaN-based technology: selective area doping and hole-based p-channel devices. Current selective area doping methods are still immature and lead to low-quality lateral p-n junctions, which prevent the realization of advanced power transistors and rectifiers. The missing of hole-based p-channel devices hinders the development of GaN complementary integrated circuits. This thesis comprehensively studied these challenges. The first part (chapter 2) researched the selective area doping by etch-then-regrow. A GaN-based vertical-channel junction field-effect transistors (VC-JFETs) was experimentally demonstrated by blanket regrowth and self-planarization. The devices’ electrical performances were characterized to understand the regrowth quality. The non-ideal factors during p-GaN regrowth were also discussed. The second part (chapter 3-5) systematically studied the application of the hydrogen plasma treatment process to change the p-GaN properties selectively. A novel GaN-based metal-insulator-semiconductor junction was demonstrated. Then a novel edge termination design with avalanche breakdown capability achieved in GaN power rectifiers is proposed. The last part (Chapter 6) demonstrated a GaN-based p-channel heterojunction field-effect transistor, with record low leakage, subthreshold swing, and a record high on/off ratio. In the end, some outlook and future work have also been proposed. Although in infancy, the demonstrated etch-then-regrow and the hydrogen plasma treatment methods have the potential to ultimately solve the challenges in GaN and benefit the development of the wide-ultra-wide bandgap industry, technology, and society.

This dissertation aims to study the electron and spin transport, scattering in two dimensional pseudospin-1 lattice systems, hybrid systems of topological insulator and magnetic insulators, and molecule chain systems. For pseudospin-1 systems, the energy band consists of a pair of Dirac cones and a flat band through the connecting point of the cones. First, contrary to the conditional wisdom that flatband can localize electrons, I find that in a non-equilibrium situation where a constant electric field is suddenly switched on, the flat band can enhance the resulting current in both the linear and nonlinear response regimes compared to spin-1/2 system. Second, in the setup of massive pseudospin-1 electron scattering over a gate potential scatterer, I discover the large resonant skew scattering called super skew scattering, which does not arise in the corresponding spin-1/2 system and massless pseudospin-1 system. Third, by applying an appropriate gate voltage to generate a cavity in an alpha-T3 lattice, I find the exponential decay of the quasiparticles from a chaotic cavity, with a one-to-one correspondence between the exponential decay rate and the Berry phase for the entire family of alpha-T3 materials. Based on the hybrid system of a ferromagnetic insulator on top of a topological insulator, I first investigate the magnetization dynamics of a pair of ferromagnetic insulators deposited on the surface of a topological insulator. The spin polarized current on the surface of topological insulator can affect the magnetization of the two ferromagnetic insulators through proximity effect, which in turn modulates the electron transport, giving rise to the robust phase locking between the two magnetization dynamics. Second, by putting a skyrmion structure on top of a topological insulator, I find robust electron skew scattering against skyrmion structure even with deformation, due to the emergence of resonant modes. The chirality of molecule can lead to spin polarized transport due to the spin orbit interaction. I investigate spin transport through a chiral polyacetylene molecule and uncover the emergence of spin Fano resonances as a manifestation of the chiral induced spin selectivity effect.

Wide bandgap semiconductors are of much current interest due to their superior electrical properties. This dissertation describes electron microscopy characterization of GaN-on-GaN structures for high-power vertical device applications. Unintentionally-doped (UID) GaN layers grown homoepitaxially via metal-organic chemical vapor deposition on freestanding GaN substrates, were subjected to dry etching, and layers of UID-GaN/p-GaN were over-grown. The as-grown and regrown heterostructures were examined in cross-section using transmission electron microscopy (TEM). Two different etching treatments, fast-etch-only and multiple etches with decreasing power, were employed. The fast-etch-only devices showed GaN-on-GaN interface at etched location, and low device breakdown voltages were measured (~ 45-95V). In comparison, no interfaces were visible after multiple etching steps, and the corresponding breakdown voltages were much higher (~1200-1270V). These results emphasized importance of optimizing surface etching techniques for avoiding degraded device performance. The morphology of GaN-on-GaN devices after reverse-bias electrical stressing to breakdown was investigated. All failed devices had irreversible structural damage, showing large surface craters (~15-35 microns deep) with lengthy surface cracks. Cross-sectional TEM of failed devices showed high densities of threading dislocations (TDs) around the cracks and near crater surfaces. Progressive ion-milling across damaged devices revealed high densities of TDs and the presence of voids beneath cracks: these features were not observed in unstressed devices. The morphology of GaN substrates grown by hydride vapor-phase epitaxy (HVPE) and by ammonothermal methods were correlated with reverse-bias results. HVPE substrates showed arrays of surface features when observed by X-ray topography (XRT). All fabricated devices that overlapped with these features had typical reverse-bias voltages less than 100V at a leakage current limit of 10-6 A. In contrast, devices not overlapping with such features reached voltages greater than 300V. After etching, HVPE substrate surfaces showed defect clusters and macro-pits, whereas XRT images of ammonothermal substrate revealed no visible features. However, some devices fabricated on ammonothermal substrate failed at low voltages. Devices on HVPE and ammonothermal substrates with low breakdown voltages showed crater-like surface damage and revealed TDs (~25µm deep) and voids; such features were not observed in devices reaching higher voltages. These results should assist in developing protocols to fabricate reliable high-voltage devices.

Design and development of optical sensors for the detection of specific targets, e.g., ions, molecules, proteins, light polarizations, is one of the most essential research topics in the field of nanophotonics that paves the way for significant technological progressions in chemical and biomarker detections, polarimetric imaging and other sensing related applications. In this dissertation, three designs of optical sensors based on plasmonic and dielectric nanostructures are thoroughly studied for the applications in chemicals, biomarkers and light polarization detection. Firstly, a plasmonic nanoantenna structure, which is composed of complementary anisotropic nanobars and nanoapertures featuring strong localized electric field enhancement at nanogap region, demonstrates both high sensitivity refractometric detection and specific infrared fingerprint detection for chemical sensing. Specifically, the sensor can probe monolayer thin octadecanethiol with a large resonance shift of 136 nm and all four characteristic infrared fingerprints detected. Secondly, a bio-inspired double-layered metasurface structure, which is made of dielectric nanoantenna and plasmonic nanogratings, mediates strong optical chirality and enables the selection of circularly polarized light handedness (extinction ratio ≥ 35) with high transmission efficiency (≥ 80%). The structure can be further integrated on-chip with linear polarizers for highly precise full-Stokes polarimetric detection with minimum transmission loss. Lastly, a gold nanoparticle based colorimetric assay is designed for high sensitivity, specificity and rapid detection of infectious diseases related biomarkers. The complete design workflows from critical reagents productions, rapid detection protocol to assay characterizations are extensively studied. Detection of Ebola virus disease biomarker, secreted glycoprotein, within 20 minutes are experimentally demonstrated with limit of detection down to ~40 pM and a broad detection range from 10 pM to 1 µM. The designs of the three sensors propose novel and versatile design concepts for the development of sensing devices in the detection of chemicals, biomarkers and light polarization. The efforts in the fundamental theoretical analysis and experimental demonstrations are expected to provide valuable contents to the optical sensor researches and to potentially inspire new sensor designs for broad sensing applications in the future.

Advanced and mature computer simulation methods exist in fluid dynamics, elec-

tromagnetics, semiconductors, chemical transport, and even chemical and material

electronic structure. However, few general or accurate methods have been developed

for quantum photonic devices. Here, a novel approach utilizing phase-space quantum

mechanics is developed to model photon transport in ring resonators, a form of en-

tangled pair source. The key features the model needs to illustrate are the emergence

of non-classicality and entanglement between photons due to nonlinear effects in the

ring. The quantum trajectory method is subsequently demonstrated on a sequence

of elementary models and multiple aspects of the ring resonator itself.

This dissertation covers my doctoral research on the cathodoluminescence (CL) study of the optical properties of III-niride semiconductors.

The first part of this thesis focuses on the optical properties of Mg-doped gallium nitride (GaN:Mg) epitaxial films. GaN is an emerging material for power electronics, especially for high power and high frequency applications. Compared to traditional Si-based devices, GaN-based devices offer superior breakdown properties, faster switching speed, and reduced system size. Some of the current device designs involve lateral p-n junctions which require selective-area doping. Dopant distribution in the selectively-doped regions is a critical issue that can impact the device performance. While most studies on Mg doping in GaN have been reported for epitaxial grown on flat c-plane substrates, questions arise regarding the Mg doping efficiency and uniformity in selectively-doped regions, where growth on surfaces etched away from the exact c-plane orientation is involved. Characterization of doping concentration distribution in lateral structures using secondary ion mass spectroscopy lacks the required spatial resolution. In this work, visualization of acceptor distribution in GaN:Mg epilayers grown by metalorganic chemical vapor deposition (MOCVD) was achieved at sub-micron scale using CL imaging. This was enabled by establishing a correlation among the luminescence characteristics, acceptor concentration, and electrical conductivity of GaN:Mg epilayers. Non-uniformity in acceptor distribution has been observed in epilayers grown on mesa structures and on miscut substrates. It is shown that non-basal-plane surfaces, such as mesa sidewalls and surface step clusters, promotes lateral growth along the GaN basal planes with a reduced Mg doping efficiency. The influence of surface morphology on the Mg doping efficiency in GaN has been studied.

The second part of this thesis focuses on the optical properties of InGaN for photovoltaic applications. The effects of thermal annealing and low energy electron beam irradiation (LEEBI) on the optical properties of MOCVD-grown In0.14Ga0.86N films were studied. A multi-fold increase in luminescence intensity was observed after 800 °C thermal annealing or LEEBI treatment. The mechanism leading to the luminescence intensity increase has been discussed. This study shows procedures that significantly improve the luminescence efficiency of InGaN, which is important for InGaN-based optoelectronic devices.