Long Wavelength (1.3 µm and 1.5 µm) Photoluminescence from InGaAs/GaPAsSb Quantum Wells Grown on GaAs

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Date Created
1999
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Long Wavelength Pseudomorphic InGaPAsSb Type-I and Type-II Active Layers Grown on GaAs

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Date Created
2000
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Strained InGaAs/GaPAsSb Heterostructures Grown on GaAs (001) for Optoelectronic Applications in the 1100 nm – 1550 nm Range

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Date Created
2000
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GaAs-Substrate-Based Long-Wave Active Materials With Type-II Band Alignments

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Date Created
2001
Agent
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