Determining carrier mobilities in GaAs and natural pyrite using geometrical magnetoresistance measurement
Description
Measurements of the geometrical magnetoresistance of a conventional semiconductor, gallium arsenide (GaAs), and a more recently developed semiconductor, iron pyrite (FeS2) were measured in the Corbino disc geometry as a function of magnetic field to determine the carrier mobility (μm). These results were compared with measurements of the Hall mobility (μH) made in the Van der Pauw configuration. The scattering coefficient (ξ), defined as the ratio between magnetoresistance and Hall mobility (μm/μH), was determined experimentally for GaAs and natural pyrite from 300 K to 4.2 K. The effect of contact resistance and heating on the measurement accuracy is discussed.
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2016
Agent
- Author (aut): Ravi, Aditya
- Thesis advisor (ths): Newman, Nathan
- Committee member: Singh, Rakesh
- Committee member: Ferry, David K.
- Publisher (pbl): Arizona State University