Description
Measurements of the geometrical magnetoresistance of a conventional semiconductor, gallium arsenide (GaAs), and a more recently developed semiconductor, iron pyrite (FeS2) were measured in the Corbino disc geometry as a function of magnetic field to determine the carrier mobility (μm). These results were compared with measurements of the Hall mobility (μH) made in the Van der Pauw configuration. The scattering coefficient (ξ), defined as the ratio between magnetoresistance and Hall mobility (μm/μH), was determined experimentally for GaAs and natural pyrite from 300 K to 4.2 K. The effect of contact resistance and heating on the measurement accuracy is discussed.
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Details
Title
- Determining carrier mobilities in GaAs and natural pyrite using geometrical magnetoresistance measurement
Contributors
- Ravi, Aditya (Author)
- Newman, Nathan (Thesis advisor)
- Singh, Rakesh (Committee member)
- Ferry, David K. (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2016
Subjects
- Materials Science
- Electrical Engineering
- Carrier Mobilties
- Geometrical Magnetoresistance
- Hall Measurement
- High Resistive Semiconductor
- Pyrites
- Transport properties
- Gallium arsenide semiconductors
- Magnetoresistance
- Pyrites--Magnetic properties.
- Pyrites
- Gallium arsenide--Magnetic properties.
- Gallium arsenide
Resource Type
Collections this item is in
Note
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thesisPartial requirement for: M.S., Arizona State University, 2016
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bibliographyIncludes bibliographical references (pages 62-63)
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Field of study: Materials science and engineering
Citation and reuse
Statement of Responsibility
by Aditya Ravi