The structure of glass has been the subject of many studies, however some

details remained to be resolved. With the advancement of microscopic

imaging techniques and the successful synthesis of two-dimensional materials,

images of two-dimensional glasses (bilayers of silica) are now available,

confirming that this glass structure closely follows the continuous random

network model. These images provide complete in-plane structural information

such as ring correlations, and intermediate range order and with computer

refinement contain indirect information such as angular distributions, and

tilting.

This dissertation reports the first work that integrates the actual atomic

coordinates obtained from such images with structural refinement to enhance

the extracted information from the experimental data.

The correlations in the ring structure of silica bilayers are studied

and it is shown that short-range and intermediate-range order exist in such networks.

Special boundary conditions for finite experimental samples are designed so atoms

in the bulk sense they are part of an infinite network.

It is shown that bilayers consist of two identical layers separated by a

symmetry plane and the tilted tetrahedra, two examples of

added value through the structural refinement.

Finally, the low-temperature properties of glasses in two dimensions

are studied. This dissertation presents a new approach to find possible

two-level systems in silica bilayers employing the tools of rigidity theory

in isostatic systems.

The continuous random network (CRN) model of network glasses is widely accepted as a model for materials such as vitreous silica and amorphous silicon. Although it

has been more than eighty years since the proposal of the CRN, there has not been conclusive experimental evidence of the structure of glasses and amorphous

materials. This has now changed with the advent of two-dimensional amorphous materials. Now, not only the distribution of rings but the actual atomic ring

structure can be imaged in real space, allowing for greater charicterization of these types of networks. This dissertation reports the first work done

on the modelling of amorphous graphene and vitreous silica bilayers. Models of amorphous graphene have been created using a Monte Carlo bond-switching method

and MD method. Vitreous silica bilayers have been constructed using models of amorphous graphene and the ring statistics of silica bilayers has been studied.

This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and elemental segregation. In a separate study, compositional instability is observed in lattice-matched InAlN films grown on GaN, for growth beyond a certain thickness. Beyond 200 nm of thickness, two sub-layers with different indium content are observed, the top one with lower indium content.