In this dissertation, the nanofabrication process is characterized for fabrication of nanostructure on surface of silicon and gallium phosphide using silica nanosphere lithography (SNL) and metal assisted chemical etching (MACE) process. The SNL process allows fast process time and well defined silica nanosphere monolayer by spin-coating process after mixing N,N-dimethyl-formamide (DMF) solvent. The MACE process achieves the high aspect ratio structure fabrication using the reaction between metal and wet chemical. The nanostructures are fabricated on Si surface for enhanced light management, but, without proper surface passivation those gains hardly impact the performance of the solar cell. The surface passivation of nanostructures is challenging, not only due to larger surface areas and aspect ratios, but also has a direct result of the nanofabrication processes. In this research, the surface passivation of silicon nanostructures is improved by modifying the silica nanosphere lithography (SNL) and the metal assisted chemical etching (MACE) processes, frequently used to fabricate nanostructures. The implementation of a protective silicon oxide layer is proposed prior to the lithography process to mitigate the impact of the plasma etching during the SNL. Additionally, several adhesion layers are studied, chromium (Cr), nickel (Ni) and titanium (Ti) with gold (Au), used in the MACE process. The metal contamination is one of main damage and Ti makes the mitigation of metal contamination. Finally, a new chemical etching step is introduced, using potassium hydroxide at room temperature, to smooth the surface of the nanostructures after the MACE process. This chemical treatment allows to improve passivation by surface area control and removing surface defects. In this research, I demonstrate the Aluminum Oxide (Al2O3) passivation on nanostructure using atomic layer deposition (ALD) process. 10nm of Al2O3 layer makes effective passivation on nanostructure with optimized post annealing in forming gas (N2/H2) environment. However, 10nm thickness is not suitable for hetero structure because of carrier transportation. For carrier transportation, ultrathin Al2O3 (≤ 1nm) layer is used for passivation, but effective passivation is not achieved because of insufficient hydrogen contents. This issue is solved to use additional ultrathin SiO2 (1nm) below Al2O3 layer and hydrogenation from doped a-Si:H. Moreover, the nanostructure is creased on gallium phosphide (GaP) by SNL and MACE process. The fabrication process is modified by control of metal layer and MACE solution.

In this thesis, I present a lab-on-a-chip (LOC) that can separate and detect Escherichia Coli (E. coli) in simulated urine samples for Urinary Tract Infection (UTI) diagnosis. The LOC consists of two (concentration and sensing) chambers connected in series and an integrated impedance detector. The two-chamber approach is designed to reduce the non-specific absorption of proteins, e.g. albumin, that potentially co-exist with E. coli in urine. I directly separate E. coli K-12 from a urine cocktail in a concentration chamber containing micro-sized magnetic beads (5 µm in diameter) conjugated with anti-E. coli antibodies. The immobilized E. coli are transferred to a sensing chamber for the impedance measurement. The measurement at the concentration chamber suffers from non-specific absorption of albumin on the gold electrode, which may lead to a false positive response. By contrast, the measured impedance at the sensing chamber shows ~60 kÙ impedance change between 6.4x104 and 6.4x105 CFU/mL, covering the threshold of UTI (105 CFU/mL). The sensitivity of the LOC for detecting E. coli is characterized to be at least 3.4x104 CFU/mL. I also characterized the LOC for different age groups and white blood cell spiked samples. These preliminary data show promising potential for application in portable LOC devices for UTI detection.