Characterization of Silicon MESFETs for Mixed Signal and RF Electronics
Description
MESFETs are used in high frequency applications and are typically made from GaAs. Dr. Trevor Thornton designed a silicon-on-insulator MESFET \u2014 a cheaper alternative with competitive capabilities. This paper concerns the characterization and modeling of this device to exhibit its marketability as a CMOS integrated transistor. Overviews of the MESFET's history and DLTS (deep level transient spectroscopy) are offered.
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2014-05
Agent
- Author (aut): Terrell, Catherine Elaine
- Thesis director: Thornton, Trevor
- Committee member: Young, Alexander
- Contributor (ctb): Barrett, The Honors College
- Contributor (ctb): Electrical Engineering Program