Optical Characterization of Band Gaps for Sulfide-based Chalcogenide and Copper Oxide Thin Films
Description
The purpose of this research is to optically characterize the band gaps of sulfide-based chalcogenides and copper oxide thin films. The analysis on the copper oxide thin films will view the effects of various annealing temperatures and the analysis of the chalcogenides will view the effects of silver doping on the thin films. Using UV-Vis spectroscopy, parameters such as the absorption coefficient and determined which then provide details on the optical band gaps of these various semiconductors. With a better understanding of the bandgap of these materials, the behavior can be better predicted in fields of nanoionics and photonics.
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2020-12
Agent
- Author (aut): Arora, Rajat Anmol
- Thesis director: Gonzalez Velo, Yago
- Committee member: Kozicki, Michael
- Contributor (ctb): Electrical Engineering Program
- Contributor (ctb): Electrical Engineering Program
- Contributor (ctb): Barrett, The Honors College