Diamond Schottky P-I-N Diodes for High Power RF Receiver Protectors
Description
Wide Bandgap (WBG) semiconductor materials are shaping day-to-daytechnology by introducing powerful and more energy responsible devices. These
materials have opened the door for building basic semiconductor devices which are
superior in terms of handling high voltages, power and temperature which is not possible
using conventional silicon technology. As the research continues in the field of WBG
based devices, there is a potential chance that the semiconductor industry can save
billions of dollars deploying energy-efficient circuits in high power conversion
electronics. Diamond, silicon carbide and gallium nitride are the top three contenders
among which diamond can significantly outmatch others in a variety of properties.
This thesis describes a methodology to develop the ‘Simulation Program with
Integrated Circuit Emphasis’ (SPICE) model for diamond-based P-I-N diodes. The
developed model can predict the AC and DC response of fabricated P-I-N diodes. P-I-N
diodes are semiconductor devices commonly used to control RF and microwave signals.
It has found a very unique place in the list of available semiconductor devices in modern
electronics which interestingly shows resistance modulation property in high frequency
domain while handling a high-power signal at the same time. The developed SPICE
model for the diamond-based P-I-N diode in this project is then used to evaluate the
performance of a solid-state passive limiter in shunt configuration which protects the
sensitive instruments in ‘Radio Detection and Ranging’ (RADAR) systems
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2021
Agent
- Author (aut): JHA, VISHAL
- Thesis advisor (ths): Trevor, Trevor TT
- Committee member: Barnaby, Hugh HB
- Committee member: Aberle, James JA
- Publisher (pbl): Arizona State University