We report the crack-free growth of a 45-pair Al_0.30Ga_0.70N/Al_0.04Ga_0.96N distributed Bragg reflector (DBR) on 2 in. diameter AlN/sapphire template by metalorganic chemical vapor deposition. To mitigate the cracking issue originating from the tensile strain of Al_0.30Ga_0.70N on GaN, an AlN template was employed in this work. On the other hand, strong compressive strain experienced by Al_0.04Ga_0.96N favors 3D island growth, which is undesired. We found that inserting an 11 nm thick GaN interlayer upon the completion of AlN template layer properly managed the strain such that the Al_0.30Ga_0.70N/Al_0.04Ga_0.96N DBR was able to be grown with an atomically smooth surface morphology. Smooth surfaces and sharp interfaces were observed throughout the structure using high-angle annular dark-field imaging in the STEM. The 45-pair AlGaN-based DBR provided a peak reflectivity of 95.4% at λ = 368 nm with a bandwidth of 15 nm.

The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm[superscript 2], respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm² and 95 kW/cm² at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.