Gallium Oxide Based Devices with p-Nickel Oxide (NiO) and p-Gallium Nitride (GaN) for Power Electronics Applications

The difficulty in positively doping Ga2O3 has led to the introduction and use of other p-type oxides - thereby Ga2O3 heterostructures. The purpose of this work is to explore, understand the potential of, and characterize two heterojunctions in particular - the p-GaN/n-Ga2O3 and p-NiO/n-Ga2O3 heterostructures. It covers NiO/Ga2O3 and GaN/Ga2O3 pn-junction and heterojunction simulation work, as well as NiO/Ga2O3 fabricated device test results. This work explores the advantages and disadvantages of this particular heterostructure, avenues for potential application, and opportunities for future research and work in this area to help contribute to the development, fabrication, and eventual hopeful widespread use of Ga2O3 heterostructures in power electronics devices and applications.