The objective of this experiment was to use water contact angle (WCA) to measure the effectiveness of adhesion, Atomic Layer Deposition (ALD), and cleaning techniques within different operations at Intel Corporation. Using the Sessile Drop Method, goniometer instrument, and a Video Contact Angle system (VCA), the water contact angle across silicon wafers at various operations were determined. Based on the results, it was concluded that Operation 5 and Step 4.4 within Operation 5 were suspected to cause lack of uniformity across the wafers, which is detrimental to the durability of the wafer and the overall high performance of a microchip. Due to proprietary reasons, it could not be disclosed as to whether adhesion, ALD, or cleaning techniques were implemented and suspected to cause non-uniformity across the wafer, but despite any operation, the topography of the wafer should be leveled. The absolute slopes of Operation 5 and Step 4.4 were 2.445 and 3.189, respectively. These slopes represented the change in contact angles across different positions of the wafer. In comparison, these showed the greatest variation of contact angles across the wafers, meaning the surface topography was more concentrated in certain areas of the wafer than others. Given these characteristics, Operation 5 and Step 4.4 are not qualified to produce high performing microchips because their techniques and methods are prone to cause surface defects, wafer stress, and wafer breakage.
Details
- Surface Chemistry: The Principles and Techniques of Contact Angle in Microelectronics
- Munoz, Camryn (Author)
- Chan, Candace (Thesis director)
- Frazier, Amy (Committee member)
- Barrett, The Honors College (Contributor)
- School of Molecular Sciences (Contributor)