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This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (lambda/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 mu m). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation. Post-growth characterization using high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy reveals smooth surface morphology, low defect density, and coherent interfaces. Reflectance spectroscopy results show that a DBR sample of seven lambda/4 pairs has a peak reflectance as high as 99.0% centered at 2.56 mu m with a bandwidth of 517 nm.
- Fan, Jin (Author)
- Liu, Xinyu (Author)
- Ouyang, Lu (Author)
- Pimpinella, Richard E. (Author)
- Dobrowolska, Margaret (Author)
- Furdyna, Jacek K. (Author)
- Smith, David (Author)
- Zhang, Yong-Hang (Author)
- Ira A. Fulton Schools of Engineering (Contributor)
Fan, J., Liu, X., Ouyang, L., Pimpinella, R. E., Dobrowolska, M., Furdyna, J. K., . . . Zhang, Y. (2013). Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed bragg reflectors. Journal of Vacuum Science & Technology B, 31(3), 03C109. doi:10.1116/1.4793475
- 2013-10-28 04:57:24
- 2021-12-06 04:44:21
- 2 years 11 months ago