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This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (lambda/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 mu m). A series of ZnTe/GaSb

This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (lambda/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 mu m). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation. Post-growth characterization using high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy reveals smooth surface morphology, low defect density, and coherent interfaces. Reflectance spectroscopy results show that a DBR sample of seven lambda/4 pairs has a peak reflectance as high as 99.0% centered at 2.56 mu m with a bandwidth of 517 nm.

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Title
  • Molecular Beam Epitaxial Growth of High-Reflectivity and Broad-Bandwidth ZnTe/GaSb Distributed Bragg Reflectors
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Date Created
2013-10-28
Resource Type
  • Text
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    Identifier
    • Digital object identifier: 10.1116/1.4793475
    • Identifier Type
      International standard serial number
      Identifier Value
      1365-2966
    • Identifier Type
      International standard serial number
      Identifier Value
      0035-8711
    Note
    • © 2013 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science & Technology B, 31(3), 03C109. and may be found at http://scitation.aip.org/content/avs/journal/jvstb/31/3/10.1116/1.4793475

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    Fan, J., Liu, X., Ouyang, L., Pimpinella, R. E., Dobrowolska, M., Furdyna, J. K., . . . Zhang, Y. (2013). Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed bragg reflectors. Journal of Vacuum Science & Technology B, 31(3), 03C109. doi:10.1116/1.4793475

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