Matching Items (43,917)
Description
Recent changes in the energy markets structure combined with the conti-nuous load growth have caused power systems to be operated under more stressed conditions. In addition, the nature of power systems has also grown more complex and dynamic because of the increasing use of long inter-area tie-lines and the high motor loads especially those comprised mainly of residential single phase A/C motors. Therefore, delayed voltage recovery, fast voltage collapse and short term voltage stability issues in general have obtained significant importance in relia-bility studies. Shunt VAr injection has been used as a countermeasure for voltage instability. However, the dynamic and fast nature of short term voltage instability requires fast and sufficient VAr injection, and therefore dynamic VAr devices such as Static VAr Compensators (SVCs) and STATic COMpensators (STAT-COMs) are used. The location and size of such devices are optimized in order to improve their efficiency and reduce initial costs. In this work time domain dy-namic analysis was used to evaluate trajectory voltage sensitivities for each time step. Linear programming was then performed to determine the optimal amount of required VAr injection at each bus, using voltage sensitivities as weighting factors. Optimal VAr injection values from different operating conditions were weighted and averaged in order to obtain a final setting of the VAr requirement. Some buses under consideration were either assigned very small VAr injection values, or not assigned any value at all. Therefore, the approach used in this work was found to be useful in not only determining the optimal size of SVCs, but also their location.
Contributors
Salloum, Ahmed (Author) / Vittal, Vijay (Thesis advisor) / Heydt, Gerald (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created
2011
Description
ABSTRACT "In the Penal Colony" is a three-act play based on the original short story by Franz Kafka and adapted by ASU MFA playwright Christian Krauspe. Told in flashback-form; a lone female Traveler arrives at a nameless penal colony where she is asked to comment on an old execution device known simply as, "the apparatus." She is pressured by the colonies administration to condone the practice while simultaneously asked to endorse the machine by her guiding officer in hopes of preserving the mystical powers the apparatus seems to possess. The Traveler must make the choice to endorse or condone the machine while she faces her own demons in the process.
Contributors
Krauspe, Christian (Author) / Reyes, Guillermo (Thesis advisor) / Taylor, Philip (Committee member) / Sterling, Pamela (Committee member) / Arizona State University (Publisher)
Created
2011
Description
This research work describes the design of a fault current limiter (FCL) using digital logic and a microcontroller based data acquisition system for an ultra fast pilot protection system. These systems have been designed according to the requirements of the Future Renewable Electric Energy Delivery and Management (FREEDM) system (or loop), a 1 MW green energy hub. The FREEDM loop merges advanced power electronics technology with information tech-nology to form an efficient power grid that can be integrated with the existing power system. With the addition of loads to the FREEDM system, the level of fault current rises because of increased energy flow to supply the loads, and this requires the design of a limiter which can limit this current to a level which the existing switchgear can interrupt. The FCL limits the fault current to around three times the rated current. Fast switching Insulated-gate bipolar transistor (IGBT) with its gate control logic implements a switching strategy which enables this operation. A complete simulation of the system was built on Simulink and it was verified that the FCL limits the fault current to 1000 A compared to more than 3000 A fault current in the non-existence of a FCL. This setting is made user-defined. In FREEDM system, there is a need to interrupt a fault faster or make intelligent deci-sions relating to fault events, to ensure maximum availability of power to the loads connected to the system. This necessitates fast acquisition of data which is performed by the designed data acquisition system. The microcontroller acquires the data from a current transformer (CT). Mea-surements are made at different points in the FREEDM system and merged together, to input it to the intelligent protection algorithm that has been developed by another student on the project. The algorithm will generate a tripping signal in the event of a fault. The developed hardware and the programmed software to accomplish data acquisition and transmission are presented here. The designed FCL ensures that the existing switchgear equipments need not be replaced thus aiding future power system expansion. The developed data acquisition system enables fast fault sensing in protection schemes improving its reliability.
Contributors
Thirumalai, Arvind (Author) / Karady, George G. (Thesis advisor) / Vittal, Vijay (Committee member) / Hedman, Kory (Committee member) / Arizona State University (Publisher)
Created
2011
Description
The purpose of this study was to investigate the effect of complex structure on dimensionality assessment in compensatory and noncompensatory multidimensional item response models (MIRT) of assessment data using dimensionality assessment procedures based on conditional covariances (i.e., DETECT) and a factor analytical approach (i.e., NOHARM). The DETECT-based methods typically outperformed the NOHARM-based methods in both two- (2D) and three-dimensional (3D) compensatory MIRT conditions. The DETECT-based methods yielded high proportion correct, especially when correlations were .60 or smaller, data exhibited 30% or less complexity, and larger sample size. As the complexity increased and the sample size decreased, the performance typically diminished. As the complexity increased, it also became more difficult to label the resulting sets of items from DETECT in terms of the dimensions. DETECT was consistent in classification of simple items, but less consistent in classification of complex items. Out of the three NOHARM-based methods, χ2G/D and ALR generally outperformed RMSR. χ2G/D was more accurate when N = 500 and complexity levels were 30% or lower. As the number of items increased, ALR performance improved at correlation of .60 and 30% or less complexity. When the data followed a noncompensatory MIRT model, the NOHARM-based methods, specifically χ2G/D and ALR, were the most accurate of all five methods. The marginal proportions for labeling sets of items as dimension-like were typically low, suggesting that the methods generally failed to label two (three) sets of items as dimension-like in 2D (3D) noncompensatory situations. The DETECT-based methods were more consistent in classifying simple items across complexity levels, sample sizes, and correlations. However, as complexity and correlation levels increased the classification rates for all methods decreased. In most conditions, the DETECT-based methods classified complex items equally or more consistent than the NOHARM-based methods. In particular, as complexity, the number of items, and the true dimensionality increased, the DETECT-based methods were notably more consistent than any NOHARM-based method. Despite DETECT's consistency, when data follow a noncompensatory MIRT model, the NOHARM-based method should be preferred over the DETECT-based methods to assess dimensionality due to poor performance of DETECT in identifying the true dimensionality.
Contributors
Svetina, Dubravka (Author) / Levy, Roy (Thesis advisor) / Gorin, Joanna S. (Committee member) / Millsap, Roger (Committee member) / Arizona State University (Publisher)
Created
2011
Description
This study examined the ontogeny of body mass (i.e. "growth") of Otolemur garnettii and Galago senegalensis. Growth is a proximate causal mechanism for adult size variation and growth patterns themselves can be the target of selection with adult size being the end result. Therefore, growth patterns of species can be the result of adaptation to species-specific social system, ecology, and life-history. The goals of this study were to: (1) Assess whether interspecific body mass variation was due to differences in growth rate, growth duration, a combination of the two, or neither; (2) test the hypothesis that sexual size dimorphism is attained by differences in relative growth rate as predicted by sexual selection theory; and (3) test the hypothesis that frugivorous O. garnettii grow at a relatively lower rate than gummivorous Go. senegalensis as predicted by an ecological risk aversion hypothesis. Growth rates and durations of Otolemur garnettii and Galago senegalensis males and females were compared both interspecifically and intraspecifically. The hypotheses regarding the ontogeny of sexual size dimorphism and the risk aversion hypothesis were not supported. O. garnettii males and females grow at an absolutely higher rate and for a longer duration compared to Go. senegalensis males and females respectively. O. garnettii females grow at a relatively higher rate compared to Go. senegalensis females as well. This may relate to weaning habits. O. garnettii infants are weaned during the dry season when feeding competition would be presumably high making large mass at weaning advantageous. While the growth of females might be strongly influenced by natural selection and competition for resources following weaning, the growth of males may be more strongly influenced by sexual selection relating to contest competition for females. Sexual size dimorphism results from differences in growth duration in O. garnettii and from differences in both growth duration and growth rate in Go. senegalensis. The results of this study highlight the need for more data on the growth patterns, mating and social systems, feeding competition, and life history schedules for these and other galagids. Study of how and why growth patterns have diverged through evolution is important in discerning the evolutionary history of each species.
Contributors
Schaefer, Melissa K (Author) / Nash, Leanne T. (Thesis advisor) / Marzke, Mary W. (Committee member) / Schwartz, Gary T. (Committee member) / Arizona State University (Publisher)
Created
2011
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
Contributors
Sochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created
2011
Description
The marketing and development of solutions has become an increasingly important concept in both marketing practice and theory. Recent conceptual work has defined solutions as sets of products and services that allow customers to achieve customized outcomes. Although the definition of a solution is becoming clearer, the process through which solution value is generated is still opaque. The purpose of this study was to add clarity to both marketing theory and practice by examining the solution value co-creation process in depth. Service-dominant logic, the relational view, service value co-creation, and theories of organizational learning and knowledge were the basis for this examination. Social capital was also examined to determine how these important relational concepts are involved in solution development. The study was conducted in four separate phases using a multi-method approach of quantitative surveys, qualitative surveys, and depth interviews. A large, multinational educational firm provided the context for the study which included access to their solution sales force and customer base. Quantitative data was collected from 97 key informants across 182 different customer opportunities for both new and existing solution engagements. Qualitative data was also collected from 71 respondents to provide a mixed-method triangulation of how solution value is created. Overall, the study provided strong support to the idea that knowledge sharing between solution providers and their customers plays a pivotal role in the co-creation of solution value.
Contributors
Sellman, Collin (Author) / Hutt, Michael (Thesis advisor) / Kumar, Ajith (Committee member) / Walker, Beth (Committee member) / Arizona State University (Publisher)
Created
2011
Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
Contributors
Sanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created
2011
Description
Despite the extensive research on the consequences of migration, little is known about the effects of seasonal migration on fertility, contraception and sexually transmitted diseases in the countries of former Soviet Union, that have undergone vast demographic changes in the last two decades. Using cross-sectional data from two surveys conducted in Armenia in 2005 and 2007, this dissertation is exploring the effects of seasonal migration on reproductive behavior and outcomes, as well as sexual health among women left-behind. The dissertation is constructed of three independent studies that combined draw the broad picture of the consequences of seasonal migration in this part of the world. The first study, "Seasonal migration and fertility in low-fertility areas of origin" looks at the effect of seasonal migration on yearly pregnancy rates, lifetime fertility, and fertility preferences among women and their husbands. The models are fitted using discrete-time logistic regression, and random-intercept logistic regression for negative binomial and binary outcomes, correspondingly. The findings show that seasonal migration in low-fertility settings does not further disrupt fertility levels in a short-, or long-run, contradicting to the findings from high-fertility settings. However, the study provides some evidence that seasonal migration is associated with increased fertility preferences among migrant men. The second study, "Seasonal migration and contraception among women left-behind", examines the associations between migration and modern contraceptive use, by looking at current contraceptive use and the history of abortions. A series of random-intercept logistic regression models reveal that women with migrant partners are significantly less likely to use modern contraceptives, than women married to non-migrants. They also have higher rates of abortions; however this effect is moderated by the socioeconomic status of the household. The third study, "Seasonal migration and risks of sexually transmitted diseases (STDs) among women left-behind", looks at the effects of seasonal migration on the diagnosed STDs in the last three years, and self reported STD-like symptoms in the last twelve months. The results of random-intercept logistic regression for negative binomial and binary outcomes provide strong evidence of increased STD risks among migrants' wives; however, this effect is also moderated by the household income.
Contributors
Sevoyan, Arusyak (Author) / Agadjanian, Victor (Thesis advisor) / Haas, Steven (Committee member) / Yabiku, Scott (Committee member) / Arizona State University (Publisher)
Created
2011
Description
ABSTRACT The purpose of this study is to demonstrate that stable lipid bilayers can be set up on an array of silicon micropores and can be used as sites for self-inserting ion-channel proteins which can be studied independently of each other. In course of this study an acrylic based holder was designed and machined to ensure leak-free fluidic access to the silicon micropores and physical isolation of the individual array channels. To measure the ion-channel currents, we simulated, designed and manufactured low-noise transimpedance amplifiers and support circuits based on published patch clamp amplifier designs, using currently available surface-mount components. This was done in order to achieve a reduction in size and costs as well as isolation of individual channels without the need for multiplexing of the input. During the experiments performed, stable bilayers were formed across an array of four vertically mounted 30 µm silicon micropores and OmpF porins were added for self insertion in each of the bilayers. To further demonstrate the independence of these bilayer recording sites, the antibiotic Ampicillin (2.5 mM) was added to one of the fluidic wells. The ionic current in each of the wells was recorded simultaneously. Sub-conductance states of Ompf porin were observed in two of the measurement sites. In addition, the conductance steps in the site containing the antibiotic could be clearly seen to be larger compared to those of the unmodified site. This is due to the transient blocking of ion flow through the porin due to translocation of the antibiotic. Based on this demonstration, ion-channel array reconstitution is a potential method for efficient electrophysiological characterization of different types of ion-channels simultaneously as well as for studying membrane permeation processes.
Contributors
Ramakrishnan, Shankar (Author) / Goryll, Michael (Thesis advisor) / Thornton, Trevor J (Committee member) / Blain Christen, Jennifer M (Committee member) / Arizona State University (Publisher)
Created
2011