Description
Miniaturization of microdevices comes at the cost of increased circuit complexity and operating current densities. At high current densities, the resulting electron wind imparts a large momentum to metal ions triggering electromigration which leads to degradation of interconnects and solder, ultimately resulting in circuit failure. Although electromigration-induced defects in electronic materials can manifest in several forms, the formation of voids is a common occurrence. This research aims at understanding the morphological evolution of voids under electromigration by formulating a diffuse interface approach that accounts for anisotropic mobility in the metallic interconnect. Based on an extensive parametric study, this study reports the conditions under which pancaking of voids or the novel void ‘swimming’ regimes are observed. Finally, inferences are drawn to formulate strategies using which the reliability of interconnects can be improved.
Details
Title
- Phase-Field Modeling of Electromigration-Mediated Morphological Evolution of Voids in Interconnects
Contributors
- Vemulapalli, Sree Shivani (Author)
- Ankit, Kumar (Thesis advisor)
- Chawla, Nikhilesh (Committee member)
- Singh, Arunima (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2020
Subjects
Resource Type
Collections this item is in
Note
- Masters Thesis Materials Science and Engineering 2020