Full metadata
Title
Hybrid Envelope Tracking Supply Modulator Analysis and Design for Wideband Applications
Description
A wideband hybrid envelope tracking modulator utilizing a hysteretic-controlled three-level switching converter and a slew-rate enhanced linear amplifierer is presented. In addition to smaller ripple and lower losses of three-level switching converters, employing the proposed hysteresis control loop results in a higher speed loop and wider bandwidth converter, enabling over 80MHz of switching frequency. A concurrent sensor circuit monitors and regulates the flying capacitor voltage VCF and eliminates conventional required calibration loop to control it. The hysteretic-controlled three-level switching converter provides a high percentage of power amplifier supply load current with lower ripple, reducing the linear amplifier high-frequency current and ripple cancellation current, improving the overall system efficiency. A slew-rate enhancement (SRE) circuit is employed in the linear amplifier resulting in slew-rate of
over 307V/us and bandwidth of over 275MHz for the linear amplifier. The slew-rate enhancement circuit provides a parallel auxiliary current path directly to the gate of the class-AB output stage transistors, speeding-up the charging or discharging of out-
put without modifying the operating point of the remaining linear amplifier, while maintaining the quiescent current of the class-AB stage. The supply modulator is fabricated in 65nm CMOS process. The measurement results show the tracking of LTE-40MHz envelope with 93% peak efficiency at 1W output power, while the SRE is disabled. Enabling the SRE it can track LTE-80MHz envelope with peak efficiency of 91%.
over 307V/us and bandwidth of over 275MHz for the linear amplifier. The slew-rate enhancement circuit provides a parallel auxiliary current path directly to the gate of the class-AB output stage transistors, speeding-up the charging or discharging of out-
put without modifying the operating point of the remaining linear amplifier, while maintaining the quiescent current of the class-AB stage. The supply modulator is fabricated in 65nm CMOS process. The measurement results show the tracking of LTE-40MHz envelope with 93% peak efficiency at 1W output power, while the SRE is disabled. Enabling the SRE it can track LTE-80MHz envelope with peak efficiency of 91%.
Date Created
2019
Contributors
- Mahmoudidaryan, Parisa (Author)
- Kiaei, Sayfe (Thesis advisor)
- Bakkaloglu, Bertan (Committee member)
- Kitchen, Jennifer (Committee member)
- Mehdizad Taleie, Shahin (Committee member)
- Arizona State University (Publisher)
Topical Subject
Resource Type
Extent
64 pages
Language
eng
Copyright Statement
In Copyright
Primary Member of
Peer-reviewed
No
Open Access
No
Handle
https://hdl.handle.net/2286/R.I.55465
Level of coding
minimal
Note
Doctoral Dissertation Electrical Engineering 2019
System Created
- 2020-01-14 09:12:14
System Modified
- 2021-08-26 09:47:01
- 3 years 2 months ago
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