Description
III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to the large internal polarization-related fields, leading to a reduced radiative recombination rate and device efficiency, which limits the performance of InGaN LEDs in high-speed communication applications. To circumvent these negative effects, non-trivial-cavity designs such as flip-chip LEDs, metallic grating coated LEDs are proposed. This oral defense will show the works on the high-modulation-speed LEDs from basic ideas to applications. Fundamental principles such as rate equations for LEDs/laser diodes (LDs), plasmonic effects, Purcell effects will be briefly introduced. For applications, the modal properties of flip-chip LEDs are solved by implementing finite difference method in order to study the modulation response. The emission properties of highly polarized InGaN LEDs coated by metallic gratings are also investigated by finite difference time domain method.
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Details
Title
- High-modulation-speed LEDs based on III-nitride
Contributors
- Chen, Hong (Author)
- Zhao, Yuji (Thesis advisor)
- Yao, Yu (Committee member)
- Wang, Liping (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2016
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Note
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thesisPartial requirement for: M.S., Arizona State University, 2016
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bibliographyIncludes bibliographical references (pages 35-38)
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Field of study: Electrical engineering
Citation and reuse
Statement of Responsibility
by Hong Chen