Description
The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon. One scattering table is needed for conventional silicon, whereas, because of the strain breaking the symmetry of the system, three scattering tables are needed for modeling strained silicon material. Simulation results for the average drift velocity and the average electron energy are in close agreement with published data. A Monte Carlo device simulation tool has also been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator devices. The effects of different types of materials for buried oxide layers have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness have also been investigated. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.
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Details
Title
- Electrical and thermal transport in alternative device technologies
Contributors
- Qazi, Suleman (Author)
- Vasileska, Dragica (Thesis advisor)
- Goodnick, Stephen (Committee member)
- Tao, Meng (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2013
Subjects
Resource Type
Collections this item is in
Note
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thesisPartial requirement for: M.S., Arizona State University, 2013
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bibliographyIncludes bibliographical references (p. 46-47)
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Field of study: Electrical engineering
Citation and reuse
Statement of Responsibility
by Suleman Qazi