NVM challenges in medical devices

Description
Electronic devices are gaining an increasing market share in the medical field. Medical devices are becoming more sophisticated, and encompassing more applications. Unlike consumer electronics, medical devices have far more limitations when it comes to area, power and most importantly reliability. The medical devices industry has recently seen the advantages of using Flash memory instead of Read Only Memory (ROM) for firmware storage, and in some cases to replace Electrically Programmable Read Only Memories (EEPROMs) in medical devices for frequent data storage. There are direct advantages to using Flash memory instead of Read Only Memory, most importantly the fact that firmware can be rewritten along the development cycle and in the field. However, Flash technology requires high voltage circuitry that makes it harder to integrate into low power devices. There have been a lot of advances in Non-Volatile Memory (NVM) technologies, and many Flash rivals are starting to gain attention. The purpose of this thesis is to evaluate these new technologies against Flash to determine the feasibility as well as the advantages of each technology. The focus is on embedded memory in a medical device micro-controller and application specific integrated circuits (ASIC). A behavioral model of a Programmable Metallization Cell (PMC) was used to simulate the behavior and determine the advantages of using PMC technology versus flash. When compared to flash test data, PMC based embedded memory showed a reduction in power consumption by many orders of magnitude. Analysis showed that an approximated 20% device longevity increase can be achieved by using embedded PMC technology.

Details

Contributors
Hag, Eslam E (Author)
Kozicki, Michael N (Thesis advisor)
Schroder, Dieter K. (Committee member)
Goryll, Michael (Committee member)
Date Created
2010
Resource Type
Language
eng
Note
thesis
Partial requirement for: M.S., Arizona State University, 2010
bibliography
Includes bibliographical references (p. 101-102)
Field of study: Electrical engineering

Citation and reuse

Statement of Responsibility

by Eslam E. Hag

Additional Information

English
Extent
xiv, 110 p. : col. ill
Open Access
Peer-reviewed