Full metadata
Title
Plasma enhanced atomic layer deposition of oxides on graphene
Description
Integration of dielectrics with graphene is essential to the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, we investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced by these conditions yields insight into plasma effects. Using a specially designed sample configuration, we achieve ultrathin (< 1 nm) aluminum oxide films atop graphene.
Date Created
2016-05
Contributors
- Trimble, Christie Jordan (Author)
- Nemanich, Robert (Thesis director)
- Zaniewski, Anna (Committee member)
- Department of Physics (Contributor)
- Barrett, The Honors College (Contributor)
Topical Subject
Extent
19 pages
Language
eng
Copyright Statement
In Copyright
Primary Member of
Series
Academic Year 2015-2016
Handle
https://hdl.handle.net/2286/R.I.37278
Level of coding
minimal
Cataloging Standards
System Created
- 2017-10-30 02:50:57
System Modified
- 2021-08-11 04:09:57
- 3 years 3 months ago
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