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Description
In this project we are analyzing the diamond-titanium interface as it applies to diamond-based diode devices, including alpha particle, proton, and neutron detectors. This is done through the fabrication of an O-terminated B-doped diamond sample with a 20 Å Ti

In this project we are analyzing the diamond-titanium interface as it applies to diamond-based diode devices, including alpha particle, proton, and neutron detectors. This is done through the fabrication of an O-terminated B-doped diamond sample with a 20 Å Ti / 10 Å Pt overlayer which was then annealed and examined via X-ray photoelectron spectroscopy (XPS). It was discovered that after annealing the sample at temperatures ranging from 400 C - 900 C that TiC was not formed at any point during this experiment. Possible reasons for this include a lack of sufficient titanium in order to form TiC and over oxygenating the diamond surface before the metal was deposited.


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Details

Title
  • Analysis of TiC at the diamond-titanium interface for diamond-based diode detectors via annealing and XPS
Contributors
Date Created
2020-05
Resource Type
  • Text
  • Machine-readable links