Description
Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco[superscript ®] Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.
Details
Title
- Temperature dependent simulation of diamond depleted Schottky PIN diodes
Contributors
- Hathwar, Raghuraj (Author)
- Dutta, Maitreya (Author)
- Koeck, Franz (Author)
- Nemanich, Robert (Author)
- Chowdhury, Srabanti (Author)
- Goodnick, Stephen (Author)
- Ira A. Fulton Schools of Engineering (Contributor)
- School of Electrical, Computer and Energy Engineering (Contributor)
- College of Liberal Arts and Sciences (Contributor)
- Department of Physics (Contributor)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2016-06-08
Resource Type
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Identifier
- Digital object identifier: 10.1063/1.4953385
- Identifier TypeInternational standard serial numberIdentifier Value0021-8979
- Identifier TypeInternational standard serial numberIdentifier Value1089-7550
Note
- This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics and may be found at http://aip.scitation.org/doi/10.1063/1.4953385.
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Hathwar, R., Dutta, M., Koeck, F. A., Nemanich, R. J., Chowdhury, S., & Goodnick, S. M. (2016). Temperature dependent simulation of diamond depleted Schottky PIN diodes. Journal of Applied Physics, 119(22), 225703. doi:10.1063/1.4953385