Description
Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco[superscript ®] Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.
Downloads
PDF (1.8 MB)

Details

Title
  • Temperature dependent simulation of diamond depleted Schottky PIN diodes
Date Created
2016-06-08
Resource Type
  • Text
  • Collections this item is in
    Identifier
    • Digital object identifier: 10.1063/1.4953385
    • Identifier Type
      International standard serial number
      Identifier Value
      0021-8979
    • Identifier Type
      International standard serial number
      Identifier Value
      1089-7550
    Note
    • This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics and may be found at http://aip.scitation.org/doi/10.1063/1.4953385.

    Citation and reuse

    Cite this item

    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Hathwar, R., Dutta, M., Koeck, F. A., Nemanich, R. J., Chowdhury, S., & Goodnick, S. M. (2016). Temperature dependent simulation of diamond depleted Schottky PIN diodes. Journal of Applied Physics, 119(22), 225703. doi:10.1063/1.4953385

    Machine-readable links