Full metadata

Title
Quantitative Analysis of Strain Distribution in InAs/InAs1−xSbx Superlattices
Description

Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs1-xSbx superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile regions in the superlattice is significantly lower than expected, with a corresponding increase in thickness of the compressive regions. Furthermore, significant grading is observed within the tensile regions of the strain profile, indicating Sb intermixing from the InAsSb growth surface. The results signify an effective reduction in the InAs layer thickness due to the anion (As-Sb) exchange process at the InAs-on-InAsSb interface. (C) 2013 AIP Publishing LLC.

Date Created
2013
Contributors
Resource Type
Text
Extent
5 pages
Language
eng
Copyright Statement
In Copyright
Primary Member of
ASU Scholarship Showcase
Identifier
Digital object identifier: 10.1063/1.4817969
International standard serial number
0003-6951
International standard serial number
1077-3118
Peer-reviewed
No
Open Access
No
Series
APPLIED PHYSICS LETTERS
Handle
https://hdl.handle.net/2286/R.I.22313
Preferred Citation

Mahalingam, K., Steenbergen, E. H., Brown, G. J., & Zhang, Y.-H. (2013). Quantitative analysis of strain distribution in InAs/InAs1−xSbx superlattices. Applied Physics Letters, 103(6), 061908. doi:10.1063/1.4817969

Level of coding
minimal
Cataloging Standards
asu1
Note
Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in Applied Physics Letters, 103(6), 061908. doi:10.1063/1.4817969 and may be found at (http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4817969).
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System Modified
  • 2021-12-09 12:24:33
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