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Chemical vapor deposition-based sulfur passivation using hydrogen sulfide is carried out on both n-type and p-type Si(100) wafers. Al contacts are fabricated on sulfur-passivated Si(100) wafers and the resultant Schottky barriers are characterized with current–voltage (I–V), capacitance–voltage (C–V) and activation-energy methods. Al/S-passivated n-type Si(100) junctions exhibit ohmic behavior with a barrier height of <0.078 eV by the I–V method and significantly lower than 0.08 eV by the activation-energy method. For Al/S-passivated p-type Si(100) junctions, the barrier height is ~0.77 eV by I–V and activation-energy methods and 1.14 eV by the C–V method. The discrepancy between C–V and other methods is explained by image force-induced barrier lowering and edge-leakage current. The I–V behavior of an Al/S-passivated p-type Si(100) junction remains largely unchanged after 300 °C annealing in air. It is also discovered that heating the S-passivated Si(100) wafer before Al deposition significantly improves the thermal stability of an Al/S-passivated n-type Si(100) junction to 500 °C.
- Zhang, Haifeng (Author)
- Saha, Arunodoy (Author)
- Sun, Wen-Cheng (Author)
- Tao, Meng (Author)
- Ira A. Fulton Schools of Engineering (Contributor)
Zhang, Hai-feng, Saha, Arunodoy, Sun, Wen-cheng, & Tao, Meng (2014). Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 116(4), 2031-2038. http://dx.doi.org/10.1007/s00339-014-8390-7
- 2014-12-23 09:56:39
- 2021-10-26 12:31:17
- 3 years ago