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In this paper, we report on the highly conductive layer formed at the crystalline γ-alumina/SrTiO3 interface, which is attributed to oxygen vacancies. We describe the structure of thin γ-alumina layers deposited by molecular beam epitaxy on SrTiO3 (001) at growth temperatures in the range of 400–800 °C, as determined by reflection-high-energy electron diffraction, x-ray diffraction, and high-resolution electron microscopy. In situ x-ray photoelectron spectroscopy was used to confirm the presence of the oxygen-deficient layer. Electrical characterization indicates sheet carrier densities of ∼1013 cm−2 at room temperature for the sample deposited at 700 °C, with a maximum electron Hall mobility of 3100 cm2V-1s-1 at 3.2 K and room temperature mobility of 22 cm2V-1s-1. Annealing in oxygen is found to reduce the carrier density and turn a conductive sample into an insulator.
- Kormondy, Kristy J. (Author)
- Posadas, Agham B. (Author)
- Ngo, Thong Q. (Author)
- Lu, Sirong (Author)
- Goble, Nicholas (Author)
- Jordan-Sweet, Jean (Author)
- Gao, Xuan P. A. (Author)
- Smith, David (Author)
- McCartney, Martha (Author)
- Ekerdt, John G. (Author)
- Demkov, Alexander A. (Author)
- College of Liberal Arts and Sciences (Contributor)
Kormondy, Kristy J., Posadas, Agham B., Ngo, Thong Q., Lu, Sirong, Goble, Nicholas, Jordan-Sweet, Jean, Gao, Xuan P. A., Smith, David J., McCartney, Martha R., Ekerdt, John G., & Demkov, Alexander A. (2015). Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: Control of oxygen vacancies. JOURNAL OF APPLIED PHYSICS, 117(9), 0-0. http://dx.doi.org/10.1063/1.4913860
- 2015-06-10 08:00:28
- 2021-12-09 12:27:20
- 2 years 11 months ago