Description

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10-5 A/cm2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (Dit) is estimated to be as low as ∼2 × 1012 cm-2 eV-1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased Dit value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

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Title
  • Atomic Layer Deposition of Crystalline SrHfO3 Directly on Ge (001) for High-k Dielectric applications
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Date Created
2015-02-07
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4906953
    • Identifier Type
      International standard serial number
      Identifier Value
      0272-4944
    Note
    • Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in JOURNAL OF APPLIED PHYSICS 117, 5 (2015) and may be found at http://dx.doi.org/10.1063/1.4906953

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    McDaniel, Martin D., Hu, Chengqing, Lu, Sirong, Ngo, Thong Q., Posadas, Agham, Jiang, Aiting, Smith, David J., Yu, Edward T., Demkov, Alexander A., & Ekerdt, John G. (2015). Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications. JOURNAL OF APPLIED PHYSICS, 117, 054101. http://dx.doi.org/10.1063/1.4906953

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